Caen, France, September 15, 2011 --(PR.com
)-- This year, IPDiA has stood apart from the others thanks to its PICS technology (Passive Integration Connecting Substrate). This patented technology is using the thickness of the silicon to integrate hundreds of passive components, which allows to reduce the device area while increasing the components density and also their performance. These passives play the role of a filter or a protection to the actives namely, processors, reception circuits, amplifiers. The silicon itself brings a level of integration and of miniaturization that has never been reached so far, as well as a level of electrical performance 10 times better than what is obtained with the standard ceramic components.
Some smaller, more reliable electronic devices, less energy eaters have started to be on the market. These features fit perfectly the requirements set by some specific areas such as smart metering (e-metering), implantable medical devices, mobile or embedded electronic devices.
Each year, the competitors are judged by a panel of expert judges and have to satisfy several criteria: investments and R&D programs, patent registrations, number of partnerships made, technological progress. Productivity, competitiveness, environment protection and improvement brought to end users have also been key factors in the final decision.
IPDiA is a preferred supplier of high performance, high stability and high reliability silicon passive components to customers in the medical, automotive, communication, computer, industrial, and defense/aerospace markets.
The company portfolio includes standard component devices such as silicon capacitors, RF filters, RF baluns, ESD protection devices as well as customized devices.
IPDiA headquarters are located in Caen, France. The company operates design centers, sales and marketing offices and a manufacturing facility certified ISO 9001 / 14001 / 18001 as well as ISO TS 16949 for the Automotive market.
Please visit our website www.ipdia.com.