San Francisco, CA, November 16, 2011 --(PR.com
)-- In a landmark series of patent filings and technical journal submissions, AKHAN Technologies, the leader in advanced diamond electron device design, has announced that after nearly 60 years of diamond synthesis efforts the quest to commercialize diamond microelectronics has come to fruition (see the full release at www.akhantech.com). This has been achieved by way of the world’s first shallow n-type diamond material over silicon. With the debut of the Miraj Diamond™ platform, AKHAN Technologies has developed a new patent-pending process in which n-type diamond material is created over silicon with previously undemonstrated characteristics, such as shallow ionization energy of 250 meV, high carrier mobility (greater than 1000 cm2/Vs in nanocrystalline diamond thin films), no graphitic phases, and previously undemonstrated performance in low voltage high current diode device applications (900 A/mm2 current density at +2V forward bias). The creation of the material and its demonstrated application use in varying diode structures directly challenges the domination of silicon...
To view the full press release, please visit http://www.akhantech.com